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Product Detailed Parameters
- Description：NCH POWER MOSFET 500V 1.5A 6000M
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK-3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK1152STR-E is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a single configuration with a built-in body diode and is designed for surface mount applications in the LDPAK(S) package. The device supports a maximum drain current of 1.5 A and a peak pulsed drain current of 6 A, with a drain-source breakdown voltage of 500 V minimum. It operates at a maximum junction temperature of 150 °C and has a power dissipation rating of 20 W at ambient temperature.
Feature Summary
- High-voltage N-channel construction suitable for demanding switching environments
- Integrated body diode for efficient freewheeling operation
- Surface-mount compatible design for automated assembly processes
Applications
- Switch-mode power supply circuits
- Motor drive control systems
- DC-DC converter topologies
Procurement Notes
Verify the specific suffix 'STR-E' against the official Renesas datasheet to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target application circuit design.
Selection Notes
Select this component when a 500 V rated N-channel MOSFET with low gate charge is required for high-frequency switching applications. Consider the 1.5 A continuous current limit and thermal management requirements associated with the 20 W power dissipation capability in the specified package.
Part Context
This component belongs to the Renesas 2SK series of discrete semiconductor transistors. It is produced by Renesas Electronics Corporation, which acquired NEC Electronics Corporation's business operations in 2010. The product line focuses on power management and signal processing solutions for industrial and consumer electronics markets.
Replacement Considerations
Consult official substitution guides for equivalent N-channel MOSFETs with matching 500 V breakdown voltage and similar current ratings. Verify pin compatibility and thermal characteristics before replacing the original component in existing designs.
