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The Renesas 2SK1155-E is a silicon N-channel power MOSFET designed for switching and power applications. It features a TO-220AB package with three leads. The device is rated for 450V drain-source voltage and 5A continuous drain current. Key electrical characteristics include low on-resistance, high-speed switching capability, and low drive current requirements. It is suitable for use in switching regulators and DC-DC converters.
Verify the specific ordering suffix to confirm package type and tape/reel configuration. Check current availability status as components may be subject to end-of-life notices or stock fluctuations. Ensure the selected variant matches the required lead count and carrier type for your assembly process.
Select this component for designs requiring 450V blocking capability and 5A current handling in a through-hole package. Consider thermal management needs due to the TO-220AB form factor. Verify that the low drive current aligns with your gate driver capabilities for optimal switching efficiency.
This part belongs to Renesas' portfolio of single FETs and MOSFETs. It is an N-channel silicon device intended for general-purpose power switching. The TO-220AB package provides robust mechanical stability and heat dissipation for industrial and consumer electronics.
Consult official datasheets for equivalents such as the 2SK1156. Verify pinout compatibility and electrical ratings before substitution. No public confirmed substitute part numbers are explicitly listed in the provided source material.