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Product Detailed Parameters
- Description：MOSFET N-CH 50V 50MA MINI3-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V
- Rds On (Max) @ Id, Vgs：50Ohm @ 10mA, 2.5V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：4.5 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Mini3-G1
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The Panasonic 2SK1228 is a silicon N-channel MOSFET designed for switching circuits. It features high-speed switching capabilities and supports 2.5 V drive voltages. Key electrical parameters include a drain-source voltage of 50 V, a continuous drain current of 50 mA, and a power dissipation of 150 mW at 25°C ambient temperature. The device incorporates a built-in gate protection diode and exhibits low capacitance values, with input capacitance (Ciss) at 4.5 pF.
Feature Summary
- High-speed switching performance suitable for wide frequency band applications
- Integrated built-in gate protection diode for enhanced circuit reliability
- Capable of operation with low 2.5 V drive voltage signals
Applications
- General electronic equipment
- Office equipment
- Communications equipment
- Measuring instruments
- Household appliances
Procurement Notes
Verify the current lifecycle status before procurement, as this component is listed under maintenance or discontinued categories by the manufacturer. Consult official Panasonic semiconductor channels for the most up-to-date availability information and confirm that the latest specifications satisfy design requirements prior to final purchasing decisions.
Selection Notes
Select this component for standard applications requiring low-voltage switching with minimal drive current. Ensure designs remain within absolute maximum ratings, particularly regarding transient states during power-on or mode-switching. Consider thermal derating for ambient temperatures exceeding 25°C, as power dissipation decreases linearly with increasing temperature.
Part Context
This part belongs to the Panasonic Silicon MOSFETs (Small Signal) series. It utilizes an EIAJ SC-59 Mini3-G1 package. The marking symbol on the device body is '4V'. The product complies with the RoHS Directive (EU 2002/95/EC). Technical measurements are based on Japanese Industrial Standard JIS C 7030 methods for transistors.
Replacement Considerations
Consult official Panasonic documentation for confirmed substitute part numbers. No specific public substitutes are identified in the provided source material.
