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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1274-T-AZ is an N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 36 A at ambient temperature. The device utilizes a TO-251 (IPAK) surface-mount package, providing thermal dissipation capabilities of 1 W at ambient temperature and 50 W at case temperature. It operates within a junction temperature range up to 150°C and complies with RoHS3 standards.
Feature Summary
- N-channel enhancement mode MOSFET construction
- Low on-resistance for efficient power switching
- Robust thermal performance in TO-251 packaging
Applications
- Power supply circuits
- Motor control systems
- Industrial automation equipment
Procurement Notes
Verify the specific suffix '-T-AZ' against official Renesas documentation to confirm tape-and-reel packaging and lead-free compliance status. Confirm availability as this component may be subject to discontinuation notices or lifecycle changes. Ensure the ordering part number matches the exact electrical specifications required for the target application design.
Selection Notes
Select this component based on its 60 V breakdown voltage and 36 A current handling capability. Evaluate the thermal resistance characteristics of the TO-251 package relative to the system's heat dissipation requirements. Verify compatibility with the gate drive voltage levels and ensure the operating temperature range meets the environmental constraints of the final assembly.
Part Context
This component belongs to the Renesas discrete semiconductor product line, specifically within the MOSFET category. It is designed for general-purpose power switching applications requiring high current density and reliable operation in compact form factors typical of modern electronic devices.
Replacement Considerations
Consult official Renesas replacement guides for equivalent N-channel MOSFETs with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before substituting.
