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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1285-AZ is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of 3A. The device exhibits a maximum on-state resistance (RDS(on)) of 320mΩ at 10V gate drive and 400mΩ at 4.5V gate drive. It operates within a junction temperature range up to 150°C and is available in bulk packaging.
Feature Summary
- Silicon N-channel construction for standard switching applications
- Low on-state resistance characteristics optimized for efficiency
- Industrial qualification level for robust performance
Applications
- General purpose power switching circuits
- DC-DC converter topologies
- Motor control driver stages
Procurement Notes
Verify the specific suffix 'AZ' against the official Renesas datasheet to confirm package type and tape/reel specifications. Confirm product status as active or obsolete with the manufacturer before procurement planning. Ensure industrial qualification requirements align with the target application environment.
Selection Notes
Select this component for low-voltage, medium-current applications requiring reliable silicon-based switching. Compare RDS(on) values at relevant gate voltages against system requirements. Consider thermal management capabilities given the 150°C maximum operating temperature limit and package constraints.
Part Context
This part belongs to Renesas's discrete power transistor portfolio. It serves as a fundamental building block for power electronics designs. The device represents standard silicon MOSFET technology, distinct from wide-bandgap alternatives like SiC or GaN which offer different thermal and switching characteristics.
Replacement Considerations
Consult official Renesas documentation for direct cross-reference part numbers. Verify pin compatibility and electrical parameters match before substitution. No public substitute part numbers are confirmed in the provided source material.
