2SK1317-E

$11.88

Description：MOSFET N-CH 1500V 2.5A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:630ceaa2d90a Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1500V 2.5A TO3P
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1500 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：12Ohm @ 2A, 15V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：990 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：100W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P
Package / Case：TO-3P-3, SC-65-3

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2SK1317-E

Overview

The 2SK1317-E is an N-channel enhancement-mode power MOSFET manufactured by Renesas Electronics. It utilizes silicon technology and is housed in a TO-3P-3 (SC-65) through-hole package. The device features a drain-source breakdown voltage of 1500 V and supports continuous drain currents up to 7 A. Its on-resistance is specified at 12 ohms, with a gate threshold voltage of 4 V. Operating temperatures range from -55 °C to +150 °C, and the unit handles a power dissipation of 100 W.

Feature Summary

High-voltage capability for robust operation in demanding electrical environments
Through-hole mounting configuration for secure mechanical attachment
Enhanced mode channel operation for efficient switching control

Applications

High-voltage power supply circuits
Industrial motor drive systems
Inverter applications requiring high blocking voltage

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and pin alignment against datasheet specifications before integration. Ensure storage conditions prevent moisture damage. Validate that the obsolete status aligns with long-term maintenance requirements. Request original manufacturer documentation to confirm final production parameters.

Selection Notes

Evaluate thermal management capabilities given the 100 W power dissipation rating. Assess compatibility with existing gate drive voltages relative to the 4 V threshold. Consider the physical dimensions of the TO-3P-3 package for board layout constraints. Verify that the 1500 V rating exceeds maximum circuit transients. Review operating temperature limits for environmental suitability.

Part Context

This component belongs to the 2SK1317 series of power MOSFETs designed for high-voltage switching applications. Renesas Electronics produces this line using standard silicon processes. The series targets industrial and commercial power conversion needs where high voltage isolation and reliable switching are critical.