ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NCH POWER MOSFET 900V 2A 7000MOH
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：2A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：425 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：50W
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
Download product information
Overview
The 2SK1338-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a drain-to-source voltage (Vdss) rating of 900 V and a continuous drain current (Id) of 2 A at 25°C. The device is housed in a TO-220AB package with industrial qualification. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 7 Ω at 10 V gate drive and a total power dissipation (Ptot) of 50 W.
Feature Summary
- High-voltage capability suitable for demanding power switching applications
- Industrial qualification level ensuring reliability in harsh environments
- N-channel silicon MOS technology for efficient amplification and control
Applications
- Power switching circuits
- Amplification stages
- Industrial motor drives
Procurement Notes
Verify the obsolete status of this component before design-in, as availability may be limited. Confirm that the TO-220AB package dimensions match your thermal management requirements. Ensure the 900V rating aligns with your system's peak voltage stresses. Check for lead-free compliance if required by your manufacturing standards.
Selection Notes
Select this part when high voltage isolation and moderate current handling are required in an industrial setting. The 900V rating provides significant headroom for inductive loads. Consider the 50W power dissipation limit and ensure adequate heatsinking is implemented to maintain junction temperatures within safe operating limits during continuous operation.
Part Context
This component belongs to Renesas' discrete power semiconductor portfolio, specifically designed for robust performance in power electronics. As an N-channel MOSFET, it serves as a fundamental building block for converting and controlling electrical energy in various electronic systems requiring high voltage tolerance.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Designers should consult Renesas official resources or authorized distributors for current alternative recommendations compatible with the 900V/2A specification.
