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Product Detailed Parameters
- Description：MOSFET N-CH 900V 6A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：980 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
Procurement Notes
The provided documentation references the 2SK1340-E and 2SK1317-E models but contains no verified data for the 2SK1341-E. Verification of existence, specifications, and availability requires consulting official Renesas Electronics Corporation catalogs or direct manufacturer channels.
Selection Notes
No technical specifications are available for the 2SK1341-E in the provided source material. Selection cannot be performed based on electrical parameters, package types, or performance metrics due to the absence of a datasheet or product listing.
