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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK1400A-E is an N-channel silicon power MOSFET manufactured by Renesas Electronics. It features a drain-source breakdown voltage of 650V and a continuous drain current rating of 4A. The device exhibits a maximum on-resistance of 2.6 ohms, ensuring efficient switching performance in high-voltage applications. Designed for robust operation, it supports a maximum junction temperature of 150°C and utilizes a TO-220AB flange-mount package with three terminals. This component is suitable for general-purpose power switching tasks requiring reliable high-voltage handling capabilities.
Feature Summary
- N-channel enhancement mode silicon power MOSFET construction
- High voltage capability with 650V drain-source breakdown rating
- Flange-mount thermal management via TO-220AB package
- Robust operation up to 150°C junction temperature
Applications
- General-purpose high-voltage power switching circuits
- Industrial motor control systems
- Power supply unit output stages
Procurement Notes
Verify the specific suffix 'E' against official Renesas documentation to confirm compliance status and exact electrical tolerances. Confirm that the TO-220AB package variant matches your board layout requirements. Ensure the 2.6 ohm on-resistance specification aligns with your thermal design constraints for continuous 4A operation. Cross-reference the manufacturer part number directly with the Renesas catalog to avoid obsolete or discontinued stock variations.
Selection Notes
Select this component when a standard N-channel MOSFET with 650V blocking capability is required for moderate current applications. The 2.6 ohm on-resistance dictates specific thermal management needs compared to lower resistance alternatives. Consider the TO-220AB package size for adequate heat dissipation without additional heatsinking in low-duty-cycle scenarios. Verify compatibility with gate drive voltages within the specified +/- 20V range.
Part Context
This part belongs to Renesas's discrete semiconductor portfolio, specifically within the power MOSFET category. Historically associated with Hitachi Semiconductor (now Renesas), these devices are engineered for industrial and consumer electronics power management. The 2SK series represents established silicon technology designed for reliability in high-voltage environments where GaN or SiC alternatives may not be necessary due to cost or complexity constraints.
Replacement Considerations
Consult official Renesas substitution guides for direct equivalents. Verify pinout compatibility and thermal characteristics before replacing with generic 650V/4A MOSFETs.
