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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1401A-E is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It is housed in a TO-3P package with three leads and a tab for thermal management. The device is rated for a drain-source voltage of 350V and supports a continuous drain current of 15A. This component is designed for high-voltage switching applications requiring robust performance.
Feature Summary
- Low on-resistance for efficient conduction
- High-speed switching capability
- Low drive current requirements
- No secondary breakdown
Applications
- Power switching circuits
- Motor control systems
- Industrial power supplies
Procurement Notes
Verify the part status as sources indicate conflicting information regarding active versus obsolete status. Confirm the specific datasheet version from Renesas to ensure compatibility with design requirements. Check RoHS compliance documentation for regulatory adherence. Validate the TO-3P package dimensions against mechanical constraints before procurement.
Selection Notes
Select this component for applications requiring 350V blocking capability and 15A current handling in a TO-3P package. Consider the low on-resistance and high-speed switching features for efficiency. Ensure the thermal management solution accommodates the package type. Verify that the low drive current requirement aligns with the gate driver capabilities in the target circuit design.
Part Context
This N-channel power MOSFET belongs to Renesas' discrete semiconductor portfolio, historically associated with Hitachi Semiconductor technology. It serves as a high-voltage switching element suitable for industrial and automotive power electronics. The TO-3P package provides a rugged mechanical structure for high-power dissipation scenarios.
Replacement Considerations
Consult official Renesas documentation for direct replacements. Cross-reference specifications such as Vds, Id, and Rds(on) when evaluating alternatives. Verify package compatibility and pinout alignment. Note that some sources list the part as obsolete, necessitating careful validation of supply chain availability for substitute components.
