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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1402A-E is an N-channel silicon power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 650 V and a continuous drain current of 4 A. The device exhibits a maximum on-resistance of 2.6 Ω in the TO-220AB (SC-46) package with three pins. Designed for enhancement mode operation, it includes a built-in diode configuration and supports a maximum operating temperature of 150 °C. The component complies with RoHS standards.
Feature Summary
- High-voltage capability suitable for demanding power switching applications
- Integrated body diode for efficient circuit design
- Robust thermal performance supporting high-temperature environments
Applications
- Power supply circuits requiring high-voltage isolation
- Industrial motor control systems
- Inverter applications
Procurement Notes
Verify the specific suffix 'E' to confirm RoHS compliance status against the standard 2SK1402A variant. Ensure the TO-220AB flange mount package matches the thermal management requirements of the target assembly. Confirm that the 4 A current rating aligns with the system's peak load demands without exceeding the 150 °C junction temperature limit during operation.
Selection Notes
Select this component when a high-voltage N-channel MOSFET with moderate current handling is required. The 2.6 Ω on-resistance represents a trade-off between conduction losses and cost. Consider the through-hole TO-220AB package for ease of mounting on heat sinks compared to surface-mount alternatives. Verify compatibility with existing gate drive voltages for optimal switching performance.
Part Context
This part belongs to Renesas' discrete semiconductor transistor portfolio, specifically within the power MOSFET category. It succeeds or parallels earlier Hitachi-branded versions under the Renesas Electronics Corporation lineage. The component serves as a fundamental building block for power electronics, distinct from the microcontroller and analog IC families also produced by the manufacturer.
Replacement Considerations
The standard 2SK1402A shares identical electrical parameters but lacks RoHS certification. Substitution requires verifying environmental compliance requirements. No other direct cross-reference part numbers are documented in the provided source material.
