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The onsemi 2SK1419 is a single N-channel silicon power MOSFET housed in a TO-220AB package. It supports a drain current of 15A and withstands a maximum drain-source voltage of 60V. The device features a low on-resistance of 0.08 ohms at a gate drive of 10V. Key electrical parameters include a gate charge of 350pF and an input capacitance of 750pF, with an output capacitance of 90pF.
Verify the specific manufacturer marking and date code against official onsemi documentation to confirm authenticity. Ensure the TO-220AB package dimensions match your thermal management requirements. Confirm that the 60V rating and 15A current capacity align with your circuit's peak load conditions before finalizing procurement.
Select this component when a robust N-channel MOSFET is required for medium-power switching applications. The 60V breakdown voltage suits low-voltage DC systems. The TO-220AB package facilitates effective heat dissipation through direct mounting to heatsinks, making it suitable for designs where thermal performance is critical.
This part belongs to the family of discrete power semiconductors manufactured by onsemi. It serves as a fundamental building block for power electronics, providing reliable switching capabilities. The TO-220AB form factor is a standard industry choice for through-hole or panel-mount implementations requiring moderate power handling.
The 2SK4021(Q) is identified as a comparable alternative within the same product category.