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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SK1464 is a high-voltage N-channel MOSFET designed for power switching applications. It features a low on-state resistance and robust avalanche capability, making it suitable for industrial motor control and power supply circuits. The device operates with a drain-source voltage of 600V and a continuous drain current of 3A at 25°C case temperature. Key electrical characteristics include a gate threshold voltage range and a maximum gate-source voltage rating, ensuring reliable performance under varying load conditions.
Feature Summary
- High breakdown voltage capability for demanding power environments
- Low on-resistance for improved efficiency
- Robust avalanche energy handling
Applications
- Industrial motor drives
- Switching power supplies
- Inverter circuits
Procurement Notes
Verify the specific ordering suffix to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all relevant safety certifications required for your target market. Check for any recent updates to the datasheet regarding thermal derating curves or recommended operating conditions before finalizing procurement.
Selection Notes
Select this component when high voltage isolation and moderate current handling are required in a compact package. Consider the thermal resistance values if operating in enclosed spaces. Ensure the gate drive circuitry matches the specified threshold voltages to prevent partial conduction or excessive switching losses during operation.
Part Context
This part belongs to onsemi's lineup of high-voltage discrete power MOSFETs. It is commonly used as a replacement for legacy components in existing designs requiring similar pinouts and electrical ratings. The TO-220AB package provides effective heat dissipation for medium-power applications.
Replacement Considerations
Check for direct replacements within the same manufacturer family that share identical pin configurations and key electrical parameters. Verify that alternative parts meet the same voltage and current ratings to maintain system integrity without redesigning the PCB layout.
