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Product Detailed Parameters
- Description：MOSFET N-CH 500V 20A TO3P
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：270mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3050 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：120W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
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Overview
The 2SK1518-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a built-in fast recovery diode with a reverse recovery time of 120 ns. The device is designed for low on-resistance and high-speed switching applications, requiring low drive current. It is suitable for use in motor control circuits, switching regulators, and DC-DC converters.
Feature Summary
- Built-in fast recovery diode
- Low on-resistance
- High speed switching capability
- Low drive current requirement
Applications
- Motor control
- Switching regulator
- DC-DC converter
Procurement Notes
Verify the manufacturer designation as Renesas Electronics Corporation or its predecessor Hitachi Semiconductor when sourcing this component. Confirm that the part number suffix matches the specific variant required for your design. Ensure compliance with RoHS standards if applicable to your project requirements. Check datasheet revisions for any updates regarding pinout or electrical characteristics before finalizing procurement.
Selection Notes
Select this component for designs requiring integrated freewheeling diode functionality within an N-channel MOSFET package. Consider its suitability for applications demanding high-speed switching performance alongside low drive current consumption. Evaluate the thermal management requirements based on the expected load conditions in switching regulator or DC-DC converter topologies.
Part Context
This component belongs to the 2SK series of silicon N-channel MOSFETs originally developed by Hitachi Semiconductor, which was later acquired by Renesas Technology Corporation. The product line is characterized by power switching capabilities and integrated protection features like the built-in diode. Renesas continues to support these legacy parts through their official documentation channels.
Replacement Considerations
Direct substitutes include the standard 2SK1518 without the E suffix. Other similar N-channel MOSFETs from Renesas such as the 2SK1303 may offer comparable performance profiles for general power switching applications.
