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Product Detailed Parameters
- Description：NCH J-FET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The onsemi 2SK1578A-S is an N-channel Junction FET designed for electret condenser microphone applications. It features a Gate-to-Drain Breakdown Voltage of -20 V and a Drain Current of 1 mA, with a maximum allowable power dissipation of 100 mW. The device exhibits a Zero-Gate Voltage Drain Current (IDSS) ranging from 100 to 800 μA depending on the rank, and a Cutoff Voltage (VGS(off)) between -0.2 V and -1.5 V. Electrical characteristics include a Forward Transfer Admittance (|yfs|) of 0.4 to 1.2 mS at 1 kHz, Input Capacitance (Ciss) of 4.1 pF, and Reverse Transfer Capacitance (Crss) of 0.88 pF at 1 MHz. The component operates within a junction temperature range up to 150 °C.
Feature Summary
- Adopts FBET process technology for enhanced performance.
- Optimized specifically for use in electret condenser microphones.
- Provides excellent voltage and transient characteristics.
Applications
- Electret condenser microphones in audio equipment
- Electret condenser microphones in telephones
Procurement Notes
Verify the exact ordering suffix against official documentation to confirm specific binning or packaging requirements. Confirm current manufacturing status as SANYO Semiconductor products may have transitioned through corporate acquisitions. Request the latest datasheet revision to ensure alignment with updated electrical parameters and package dimensions before finalizing procurement specifications.
Selection Notes
Select based on required IDSS ranking to meet specific gain and noise targets. Ensure the operating drain current remains within the 1 mA absolute maximum rating. Verify that the gate-to-drain voltage does not exceed the -20 V breakdown limit during circuit operation. Consider the low input capacitance for high-frequency signal integrity in microphone preamplifier stages.
Part Context
This component belongs to the 2SK1578 series of N-channel JFETs originally manufactured by SANYO Semiconductor. The 'A' suffix typically denotes a specific IDSS classification or binning grade within the product family. These devices are engineered for low-noise, high-impedance input stages commonly found in consumer audio and communication hardware.
Replacement Considerations
No direct public substitute part numbers are listed in the provided documentation. When evaluating alternatives, match the N-channel JFET configuration, -20 V breakdown voltage, and similar IDSS ranges. Verify that replacement components offer comparable input impedance and noise voltage characteristics suitable for electret microphone biasing circuits.
FAQ
What is the typical forward transfer admittance of the 2SK1578A-S?
The typical forward transfer admittance (|yfs|) is 1.2 mS when measured at VDS=5V, VGS=0V, and f=1kHz.
What is the input impedance of this JFET?
The input impedance (ZIN) is specified as 25 MΩ at a frequency of 1 kHz.
How is the Zero-Gate Voltage Drain Current classified?
The IDSS is classified into ranks A through E, ranging from 100 to 800 μA, which determines the specific gain and cutoff voltage characteristics of the unit.
