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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK1587-T1-AZ is an N-channel enhancement mode MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source breakdown voltage of 16V and a continuous drain current rating of 2A. The device is housed in a TO-243 surface-mount package, which corresponds to the SOT-89 form factor. It supports a maximum operating temperature of 150°C and has an absolute maximum power dissipation of 2W. This component is classified as a single-configured transistor within the discrete semiconductor category.
Feature Summary
- N-channel metal-oxide semiconductor field-effect transistor technology
- Enhancement mode operation for switching applications
- Surface-mount compatible packaging design
Applications
- Low-voltage DC-DC converter circuits
- Power management modules requiring small form factors
- General-purpose switching applications in consumer electronics
Procurement Notes
Verify the specific suffix -T1-AZ against official Renesas documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-89 footprint requirements during PCB layout. Confirm RoHS compliance status through the latest datasheet revision. Cross-reference the part number with current availability lists as older NEC-derived components may have varying supply chain statuses.
Selection Notes
Select this component for designs requiring low-voltage switching capabilities within a compact surface-mount envelope. The 16V rating suits battery-powered systems or low-voltage logic interfaces. Evaluate thermal management needs given the 2W power dissipation limit in the TO-243 package. Ensure gate drive voltages align with the enhancement mode characteristics for efficient conduction.
Part Context
This device originates from the legacy NEC Electronics product line, which merged into Renesas Technology Corporation in April 2010. Renesas Electronics Corporation subsequently assumed all business operations and documentation responsibilities. The part remains valid under the Renesas portfolio despite the historical naming conventions found in original catalogs.
Replacement Considerations
Consult official Renesas substitution guides for direct equivalents. Verify pinout compatibility with the SOT-89/TO-243 package before replacing. Check if newer generation MOSFETs offer improved Rds(on) while maintaining the 16V/2A specification profile.
