ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NCH POWER MOSFET 500V 30A 270MOH
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tray
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：270mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：200W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-264
- Package / Case：TO-264-3, TO-264AA
Download product information
Overview
The 2SK1629-E1-E#T2 is a silicon N-channel power MOSFET manufactured by Renesas Electronics. It features a TO-264A package with three leads. Key electrical parameters include a drain-source voltage (VDSS) of 500 V, a continuous drain current (ID) of 30 A at ambient temperature, and a maximum power dissipation of 200 W at case temperature. The device exhibits a typical on-resistance (RDS(on)) of 0.22 Ω at VGS = 10 V and ID = 15 A. Gate-source voltage limits are specified at ±2.5 V, with a maximum gate-source off voltage of 3 V.
Feature Summary
- Low on-resistance for efficient power conduction
- High-speed switching capability
- Low drive current requirements
Applications
- Industrial motor control systems
- Consumer electronics power management
- General-purpose switching applications
Procurement Notes
Verify the specific suffix #T2 to confirm tape-and-reel packaging configuration. Ensure compatibility with RoHS standards as indicated by the manufacturer's compliance codes. Cross-reference the exact part number against official Renesas documentation to distinguish between tube and reel variants. Confirm thermal performance ratings align with your heatsinking design constraints.
Selection Notes
Select this component for high-voltage applications requiring moderate current handling in a through-hole compatible surface mount package. Evaluate thermal resistance characteristics against your system's heat dissipation capabilities. Consider the 500V rating for safety margins in industrial environments. Verify that the gate drive voltage supports the 10V threshold for optimal RDS(on) performance.
Part Context
This device belongs to Renesas' silicon N-channel MOSFET family, historically associated with NEC Electronics before the merger. It serves as a robust solution for medium-power switching tasks. The TO-264A package provides mechanical stability and thermal conductivity suitable for industrial and consumer sectors. It represents a standard offering in Renesas' discrete semiconductor portfolio.
Replacement Considerations
Direct substitutes may include other 500V N-channel MOSFETs in TO-264 packages from Renesas or other manufacturers. Verify pinout compatibility and thermal specifications. Check if alternative parts meet the same RDS(on) and switching speed requirements. Consult official replacement guides for confirmed cross-references.
