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Product Detailed Parameters
- Description：NCH POWER MOSFET 900V 2A 7000MOH
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：2A
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：7Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：425 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：LDPAK
- Package / Case：SC-83
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Overview
The 2SK1647STR-E is an N-channel enhancement-mode power MOSFET manufactured by Renesas Electronics. It features a metal-oxide semiconductor structure designed for high-speed switching applications. The device supports a maximum continuous drain current of 2 A and handles up to 50 W of power dissipation. It operates at temperatures up to 150 °C and utilizes surface-mount packaging.
Feature Summary
- High-speed switching capability
- Low drive current requirement
- Elimination of secondary breakdown
Applications
- High speed switching circuits
Procurement Notes
Verify the specific suffix 'STR-E' against official Renesas documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the component matches the Hitachi/Renesas lineage, as historical branding may appear in legacy datasheets. Confirm pinout compatibility with LDPAK(S)-(1) or similar DPAK variants if mechanical integration is required.
Selection Notes
Select this component for designs requiring moderate current handling with fast switching speeds. The low drive current characteristic simplifies gate driver selection. Verify thermal management requirements given the 50 W dissipation rating and ensure the operating environment remains within the specified 150 °C junction temperature limit.
Part Context
This part belongs to the Renesas (formerly Hitachi/NEC) discrete semiconductor transistor portfolio. It is categorized as a single N-channel Power Field-Effect Transistor. The manufacturer transitioned from Hitachi to Renesas Technology Corporation following corporate mergers, maintaining continuity in the product line's technical specifications and reliability standards.
Replacement Considerations
Consult official Renesas cross-reference lists for verified substitutes. Generic equivalents may not replicate the specific low drive current or secondary breakdown elimination characteristics documented for this series.
