ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1667-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a maximum drain-source voltage of 1500 V and a continuous drain current of 7 A. The device utilizes the SC-65 package, which corresponds to the TO-220AB form factor with three pins. Key electrical characteristics include a maximum on-resistance of 12 Ω at a gate-source voltage of 4 V. Specific resistance values are documented as 550 mΩ maximum and 400 mΩ typical at a gate drive of 10 V.
Feature Summary
- High-voltage capability for demanding power switching applications
- Enhanced mode operation for standard logic control interfaces
- Robust thermal performance within the SC-65/TO-220AB leaded package
Applications
- Industrial power supply systems
- Consumer electronic equipment requiring high-voltage isolation
- General-purpose switching circuits in industrial environments
Procurement Notes
Verify the specific datasheet revision when sourcing the 2SK1667-E, as Renesas product portfolios undergo periodic updates. Confirm that the received component matches the SC-65 (TO-220AB) physical package dimensions. Ensure the supplier provides traceability documentation consistent with Renesas quality standards for industrial-grade components.
Selection Notes
Select this component for designs requiring 1500 V blocking capability with moderate current handling. The 7 A rating suits applications where compact thermal management is feasible within the TO-220AB footprint. Evaluate the 12 Ω on-resistance against system efficiency requirements, as it is higher than modern low-Rds(on) alternatives.
Part Context
This part belongs to the Renesas N-channel power MOSFET family, sharing design lineage with the 2SK1317 series. These devices are engineered for high-voltage switching tasks, offering a balance between breakdown voltage and conduction loss. The SC-65 package provides a standardized mounting solution for through-hole assembly processes.
Replacement Considerations
Direct substitutes must match the 1500 V / 7 A specification and SC-65 package. Verify pinout compatibility and thermal resistance parameters before integration.
