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The 2SK1829TE85LF is a single N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 50 mA at ambient temperature. The device has a maximum gate-source voltage (Vgs) rating of 10 V and a power dissipation capability of 100 mW. It utilizes an SC-70 surface-mount package and exhibits a maximum input capacitance of 5.5 pF at 3 V.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific TE85LF suffix matches project requirements, as packaging variations may exist. Review the official datasheet for absolute maximum ratings and thermal characteristics to ensure operational safety within defined limits.
Select this component for applications requiring small-signal N-channel switching with low voltage constraints. Ensure the 20 V breakdown voltage and 50 mA current capacity align with load requirements. Consider the SC-70 package dimensions for PCB layout compatibility and verify thermal management needs against the 100 mW dissipation limit.
This part belongs to Toshiba's discrete semiconductor portfolio, specifically designed for small-signal applications. The SC-70 package provides a compact footprint suitable for space-constrained designs. As a single FET, it serves as a fundamental building block for logic-level switching and amplification circuits in consumer electronics.
Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers.