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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1838S-E is a silicon N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for switching applications with a maximum drain current of 1A and a drain-source breakdown voltage of 250V. The device features a low on-resistance of 8 ohms, ensuring efficient operation in single-element configurations.
Feature Summary
- N-channel silicon metal-oxide semiconductor field-effect transistor
- Designed for high-voltage switching applications
- Single-element configuration
Applications
- Switching circuits
Procurement Notes
Verify the exact part number suffix against official Renesas documentation to confirm specific package or tape-and-reel variations. Ensure compatibility with existing circuit designs regarding voltage ratings and thermal management requirements before procurement.
Selection Notes
Select this component for applications requiring a robust N-channel MOSFET capable of handling 250V breakdown voltage. Consider the 8-ohm on-resistance for efficiency needs and verify that the small outline package fits the target PCB layout constraints.
Part Context
This component belongs to the Renesas discrete semiconductor transistor family. It is classified as a power field-effect transistor suitable for general-purpose switching tasks within electronic systems requiring moderate current and high voltage isolation.
