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The 2SK1838STR-E is a silicon N-channel MOS FET manufactured by Renesas Electronics Corporation. It is designed for high-speed power switching applications, featuring low on-resistance and low drive current requirements. The device is RoHS compliant and utilizes an LDPAK(S)-(1) surface-mount package with four pins. It operates in enhancement mode and is rated for a maximum junction temperature of 150 °C.
Verify the specific suffix 'E' against the official Renesas datasheet to confirm compliance status and exact electrical parameters. Ensure the ordering code matches the required package type and that the component is sourced from authorized channels to guarantee authenticity and traceability.
Select this component for designs requiring efficient high-frequency operation with minimal gate drive power. Consider the thermal performance within the LDPAK package and ensure the circuit design accommodates the device's switching characteristics and voltage ratings for reliable long-term operation.
This part belongs to the Renesas (formerly NEC/Hitachi) discrete semiconductor portfolio. The company merged NEC Electronics with Renesas Technology in 2010. The 2SK series designation indicates a historical lineage from Hitachi Semiconductor, now fully integrated into Renesas Electronics Corporation's product line.
Public confirmed substitute part numbers are not available in the provided documentation.