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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK1850(0)-T-AZ is a switching N-channel power MOSFET manufactured by Renesas Electronics Corporation. This single-channel device utilizes Metal-Oxide Semiconductor technology and supports a maximum operating temperature of 150 °C. It features a maximum drain current (absolute) rating of 10 A. The component is supplied in tape packaging and is lead-free compliant.
Feature Summary
- N-channel power MOSFET configuration for switching applications
- High thermal stability with a maximum operating temperature of 150 °C
- Lead-free construction compliant with environmental standards
Applications
- Industrial equipment power management
- Consumer electronics power circuits
- General-purpose switching applications
Procurement Notes
Verify the specific suffix designation, as datasheets may reference 2SK1850-T-AZ or 2SK1850(0)-T-AZ. Confirm package dimensions and moisture sensitivity level requirements against your assembly specifications. Ensure the supplier provides official Renesas documentation to validate authenticity and lot traceability before finalizing orders.
Selection Notes
Select this component for designs requiring an N-channel silicon MOSFET with a 10 A absolute drain current capability. Consider the 150 °C junction temperature limit for thermal management calculations. Verify that the single-channel topology fits the circuit architecture and that the tape packaging aligns with automated pick-and-place equipment constraints.
Part Context
This part belongs to Renesas' discrete power transistor portfolio, specifically within the single FET category. It serves as a fundamental switching element in power conversion stages. The product line focuses on reliable performance for industrial and consumer sectors, utilizing standard MOSFET fabrication processes to ensure consistent electrical characteristics across production lots.
Replacement Considerations
Consult official Renesas documentation for direct cross-reference data. Verify pinout compatibility and electrical ratings such as Rds(on) and Vgs(th) when evaluating alternative suppliers. Ensure any substitute maintains the same package type and thermal performance characteristics.
