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The onsemi 2SK1920-E is an N-channel MOSFET from the 10V Drive Series, designed for high-efficiency power switching applications. It features a drain-source voltage of 250 V and operates within a temperature range of -55°C to 150°C. The device supports a gate-source voltage of ±30 V and contains one internal element. This component is engineered for robust performance in mission-critical power systems, offering scalable efficiency and reliability for industrial and automotive environments.
Verify the specific suffix and tape-and-reel configuration against the official datasheet before ordering. Confirm RoHS compliance status and ensure the package type matches your PCB footprint requirements. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Select this component for applications requiring 250 V blocking capability with low gate drive voltage compatibility. Evaluate thermal management needs given the 150°C maximum operating temperature. Ensure the single-element configuration aligns with the circuit topology requirements for the intended power conversion stage.
This MOSFET belongs to onsemi's intelligent power portfolio, targeting industrial automation and automotive sectors. It complements other power devices in the company's ecosystem for complete system solutions. The 10V Drive Series focuses on reducing switching losses and improving overall system efficiency in modern electronic designs.
Consult official substitution guides for equivalent N-channel MOSFETs with matching 250 V ratings and compatible package dimensions. Verify that alternative parts meet the same thermal and electrical specifications for direct replacement.