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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SK2011 is an N-channel power MOSFET designed for very high-speed switching applications. It features a drain-source voltage rating of 250V and a continuous drain current capacity of 4A. The device exhibits a maximum on-resistance of 0.7 ohms, ensuring efficient power handling in compact designs. Manufactured by Sanyo Semicon Device under the onsemi brand, it utilizes silicon metal-oxide semiconductor technology housed in a TO-220AB package.
Feature Summary
- Optimized for very high-speed switching applications
- N-channel silicon metal-oxide semiconductor construction
- Designed for efficient power handling with low on-resistance
Applications
- High-speed switching circuits
- Power management systems requiring fast response times
- General-purpose power amplification
Procurement Notes
Verify the manufacturer origin carefully, as the component is manufactured by Sanyo Semicon Device but distributed under the onsemi brand. Confirm compliance with RoHS3 standards and REACH regulations during sourcing. Ensure the TO-220AB package type matches your thermal and mechanical design requirements before finalizing procurement.
Selection Notes
Select this component when high-speed switching performance is critical alongside moderate current handling capabilities. The 250V rating suits medium-voltage applications, while the 4A current limit defines its load capacity. Consider the TO-220AB package for through-hole mounting and adequate heat dissipation without additional active cooling solutions.
Part Context
This part belongs to the broader category of single N-channel power MOSFETs. It shares functional similarities with other devices like the 2SK2010, which offers comparable specifications in similar packaging. These components are typically used in industrial and consumer electronics where reliable power switching is required.
Replacement Considerations
The 2SK2010 is a confirmed substitute part number offering identical electrical characteristics including 4A current, 250V voltage, and 0.7 ohm resistance in a TO-220AB package.
