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Product Detailed Parameters
- Description：MOSFET N-CH 600V 3A
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2059L-E is a silicon N-channel MOS FET manufactured by Renesas Electronics. It is designed for high-speed power switching applications, featuring low on-resistance and high-speed switching capabilities. The device exhibits no secondary breakdown characteristics, making it suitable for robust power management circuits. It is housed in a DPAK-1 surface mount package.
Feature Summary
- Low on-resistance
- High speed switching
- No Secondary Breakdown
Applications
- Switching regulator
- DC - DC converter
Procurement Notes
Verify the exact part number suffix against official Renesas documentation to confirm specific tape-and-reel packaging or temperature grade variations. Ensure the component matches the required DPAK-1 outline dimensions and pin configuration for your PCB layout. Cross-reference the datasheet revision date to ensure compliance with current RoHS standards and material declarations before finalizing procurement orders.
Selection Notes
Select this component for designs requiring efficient N-channel power switching with minimal conduction losses. The absence of secondary breakdown allows for safer operation under transient overload conditions compared to standard MOSFETs. Verify that the thermal management solution supports the device's maximum power dissipation and junction temperature limits during continuous high-frequency switching operations.
Part Context
This component belongs to the Renesas silicon N-channel MOS FET family, specifically engineered for power electronics. It serves as a fundamental active switch in modern power conversion topologies. The device integrates advanced semiconductor processing to achieve superior switching performance and reliability within a compact surface-mount footprint suitable for automated assembly processes.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Do not assume functional compatibility with generic N-channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.
