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The Toshiba 2SK208-R(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose, impedance conversion, and condenser microphone applications. It features a high gate-drain breakdown voltage of −50 V and low noise characteristics with a typical figure of 0.5 dB. The device operates within a drain current range of 0.3 to 6.5 mA, specifically classified as R (0.30 to 0.75 mA). It utilizes a compact SC-59 package with a maximum power dissipation of 100 mW.
Verify the specific IDSS classification suffix 'R' during procurement to ensure the drain current falls within the 0.30 to 0.75 mA range. Confirm the TE85L tape-and-reel packaging format matches assembly requirements. Ensure compliance with RoHS directives and verify that the application does not involve unintended use cases prohibited by the manufacturer's reliability guidelines.
Select this component when a low-noise JFET with high input impedance is required for small-signal applications. The 'R' variant provides a lower drain current range compared to other classifications in the series. Consider the SC-59 surface-mount package for space-constrained designs requiring reliable operation at junction temperatures up to 125 °C.
This part belongs to the 2SK208 series of silicon N-channel JFETs manufactured by Toshiba Semiconductor and Storage. The series includes variants distinguished by their drain current specifications, such as O, Y, and GR classes. The 2SK208 family is engineered for robust performance in audio and sensor interface circuits, utilizing standard JEDEC TO-236MOD or JEITA SC-59 footprints.
Direct substitutes include other 2SK208 variants with adjusted current ratings, such as 2SK208-O(TE85L,F), 2SK208-Y(TE85L,F), and 2SK208-GR(TE85L,F). Verify that the alternative class meets the specific drain current requirements of the design before substitution.