2SK208-Y(TE85L,F)

$0.44

Description：JFET N-CH 50V 6.5MA SMINI
Series：-

SKU:ef9fdd35bbcb Category: JFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 50V 6.5MA SMINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：50 V
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：1.2 mA @ 10 V
Current Drain (Id) - Max：6.5 mA
Voltage - Cutoff (VGS off) @ Id：400 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds：8.2pF @ 10V
Resistance - RDS(On)：-
Power - Max：100 mW
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：S-Mini
Grade：-
Qualification：-

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2SK208-Y(TE85L,F)

Overview

The Toshiba 2SK208-Y(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for general-purpose and impedance conversion applications. It features a SC-59 surface-mount package with a drain-source breakdown voltage of 10 V and a gate-source breakdown voltage of -50 V. The device operates within a junction temperature range of -55°C to 125°C and dissipates up to 100 mW. The 'Y' suffix indicates a specific drain current classification, with IDSS ranging from 1.2 mA to 3.0 mA at VDS = 10 V and VGS = 0.

Feature Summary

High input impedance with low gate cut-off current
Low noise figure suitable for sensitive signal processing
High gate-drain breakdown voltage for robust operation

Applications

General-purpose amplification circuits
Impedance converter stages
Condenser microphone preamplifiers

Procurement Notes

Verify the component marking against the official datasheet specifications to ensure authenticity. Confirm that the ordering suffix matches the required drain current classification for your design parameters. Ensure compliance with RoHS directives and environmental regulations applicable to your region before finalizing procurement orders.

Selection Notes

Select this component when high input impedance and low noise are critical requirements for the application circuit. The Y-classification provides a specific drain current range, ensuring consistency in biasing conditions compared to other variants. Consider the thermal derating guidelines provided in the reliability handbook for continuous operation near maximum ratings.

Part Context

This JFET belongs to the 2SK208 series manufactured by Toshiba Semiconductor and Storage. It utilizes a silicon technology process and is housed in a compact SC-59 (TO-236MOD) package. The device is intended for surface-mount assembly on printed circuit boards, offering a small footprint suitable for modern electronic designs requiring efficient space utilization.