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Product Detailed Parameters
- Description：JFET N-CH 50V 14MA SC59
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：50 V
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：14 mA @ 10 V
- Current Drain (Id) - Max：14 mA
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds：13pF @ 10V
- Resistance - RDS(On)：-
- Power - Max：150 mW
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SC-59
- Grade：-
- Qualification：-
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Overview
The Toshiba 2SK209-BL(TE85L,F) is a silicon N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It features a high forward transfer admittance of 15 mS typical at VDS = 10 V and VGS = 0, alongside a gate-drain breakdown voltage of −50 V. The device exhibits a low noise figure of 1.0 dB typical at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, and RG = 1 kΩ. Electrical characteristics include a maximum gate cut-off current of −1.0 nA at VGS = −30 V and an input capacitance of 13 pF at VDS = 10 V, VGS = 0, f = 1 MHz. The drain current IDSS ranges from 6.0 to 14.0 mA for the BL classification.
Feature Summary
- High forward transfer admittance suitable for amplification
- Low noise figure optimized for audio frequency applications
- High gate-drain breakdown voltage capability
- Small surface-mount package design
Applications
- Audio frequency low noise amplifier circuits
- High impedance input stages
- Precision analog signal processing
Procurement Notes
Verify the specific ordering suffix TE85L,F against the manufacturer's official datasheet to confirm the exact packaging format and tape-and-reel specifications. Ensure that the BL classification matches the required drain current range of 6.0 to 14.0 mA for your circuit design. Confirm RoHS compliance status directly with Toshiba Semiconductor and Storage prior to procurement.
Selection Notes
Select this component when designing audio frequency low noise amplifiers requiring high input impedance and low noise figures. The BL variant provides a higher drain current range compared to other classifications. Ensure the operating conditions remain within the absolute maximum ratings, particularly regarding power dissipation and junction temperature limits.
Part Context
This JFET belongs to the 2SK209 series manufactured by Toshiba Semiconductor and Storage. It is specifically engineered for audio frequency applications where low noise performance is critical. The device utilizes a silicon N-channel junction type technology housed in a small SC-59 (TO-236) surface-mount package.
Replacement Considerations
Consult the official Toshiba datasheet for equivalent part numbers or alternative classifications within the 2SK209 series. Verify compatibility of electrical parameters such as forward transfer admittance and noise figure before substituting.
