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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2A CPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：350mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：20W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：CPT3
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The 2SK2094TL is an N-channel Power MOSFET manufactured by ROHM Semiconductor, designed for surface-mount applications. It features a Drain-Source Breakdown Voltage (Vds) of 60 V and a continuous Drain Current (Id) of 2 A at ambient temperature. The device exhibits a maximum Drain-Source On-Resistance (Rds(on)) ranging from 300 mΩ to 400 mΩ depending on specific test conditions or revisions. Power dissipation capabilities are rated at 10 W to 20 W under case-controlled conditions. The component is housed in a CPT3 package, specifically a 3-Pin (2+Tab) configuration, and is supplied in tape and reel packaging.
Feature Summary
- N-channel polarity construction for standard switching applications
- Surface-mount CPT3 package with integrated thermal tab for heat dissipation
- Low on-resistance characteristics for efficient power handling
Applications
- DC-DC converter circuits
- Power management modules
- General-purpose switching loads
Procurement Notes
Verify the specific Rds(on) value (300 mΩ vs 400 mΩ) against the latest official datasheet revision, as sources vary. Confirm the exact power dissipation rating (10 W vs 20 W) required for your thermal design. Ensure the CPT3 package footprint matches your PCB layout. Check RoHS compliance status if mandated by your assembly standards.
Selection Notes
Select this component when a 60 V N-channel MOSFET with moderate current capability (2 A) is required. The low on-resistance makes it suitable for efficiency-critical designs. The CPT3 package offers a compact solution with improved thermal performance compared to standard SMD packages due to the exposed tab. Ensure the gate drive voltage aligns with the threshold requirements for full enhancement.
Part Context
This part belongs to the ROHM 2SK series of single N-channel MOSFETs. It is categorized under discrete semiconductor products and surface-mount transistors. The CPT3 designation refers to the specific plastic package type used by ROHM for this power level, distinguishing it from other pin-compatible or functionally similar devices in the broader MOSFET market.
Replacement Considerations
Direct substitutes must match the 60 V Vds, 2 A Id, and N-channel configuration. Verify that alternative components offer comparable Rds(on) and utilize a compatible 3-pin surface-mount package with a thermal pad to maintain thermal performance. Cross-reference pinouts to ensure compatibility.
