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Product Detailed Parameters
- Description：MOSFET N-CH 60V 10A TO220FN
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：95mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：30W (Tc)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220FN
- Package / Case：TO-220-3 Full Pack
Download product information
Overview
The 2SK2095N is a silicon N-channel MOSFET designed for small switching applications. It features low on-resistance, fast switching speed, and a wide safe operating area (SOA). The device supports easy drive circuit design with low gate-source threshold voltage and facilitates parallel operation.
Feature Summary
- Low on-resistance
- Fast switching speed
- Wide SOA
- Easy to parallel
Applications
- Audio visual equipment
- Office-automation equipment
- Communications devices
- Electrical appliances
- Electronic toys
Procurement Notes
Verify the component datasheet specifications against your specific application requirements before procurement. Confirm that the intended use aligns with standard electronic equipment categories as defined by the manufacturer. Consult sales representatives if high reliability or safety-critical applications are considered.
Selection Notes
Select this component for general-purpose switching tasks requiring efficient power handling. Consider its low VGS(th) for simplified drive circuits and its capability for parallel connection when higher current capacity is needed. Ensure peripheral conditions match the absolute maximum ratings during design.
Part Context
This part belongs to ROHM's transistor lineup, specifically categorized under small switching transistors. It utilizes a silicon N-channel structure optimized for efficiency and thermal performance in consumer and industrial electronics.
Replacement Considerations
No replacement information is available in the provided documentation.
