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Product Detailed Parameters
- Description：2SK2109-T1-AZ - N-CHANNEL MOS FE
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：111 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-62
- Package / Case：TO-243AA
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Overview
The Renesas 2SK2109-T1-AZ is an N-channel MOSFET designed for high-speed switching applications. It features a breakdown voltage of 60V and a continuous drain current of 500mA at ambient temperature. The device exhibits a maximum on-resistance of 800mΩ when driven at 10V with a 300mA drain current. It has a power dissipation rating of 2W at ambient temperature and a gate threshold voltage of 2V at 1mA drain current. The component is housed in a SC-62 (TO-243AA) surface-mount package.
Feature Summary
- N-channel silicon small-signal MOSFET structure optimized for high-speed switching operations
- Low on-resistance characteristic to minimize conduction losses in power management circuits
- Surface-mount packaging design suitable for automated assembly processes
Applications
- High-speed switching circuits
- Power management modules
- Small-signal amplification stages
Procurement Notes
Verify the specific suffix -T1-AZ against official Renesas documentation to confirm tape-and-reel packaging and RoHS compliance status. Ensure the ordering part number matches the exact electrical specifications required for the target application circuit design.
Selection Notes
Select this component for applications requiring low-voltage, low-current switching with moderate speed requirements. Consider the SC-62 package thermal characteristics and the 60V voltage rating relative to the system's operating conditions and potential transient spikes.
Part Context
This part belongs to the Renesas 2SK2109 series of N-channel MOSFETs. It is categorized as a single FET within the company's discrete semiconductor portfolio. The device is classified as a small-signal transistor intended for general-purpose electronic switching tasks.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic cross-references may not match the specific pinout or electrical tolerances of the SC-62 package configuration.
