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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2111-T2-AZ is a small-signal N-channel MOSFET manufactured by Renesas Electronics Corporation. It is designed as a switching element directly driven by 5 V IC outputs. Key electrical specifications include a maximum drain current of 0.51 A and a maximum power dissipation of 0.96 W. The device operates within a temperature range of -55°C to higher limits, with an on-resistance of 450 mΩ at 10 V gate drive and 600 mΩ at 4.5 V.
Feature Summary
- Small-signal N-channel MOSFET construction for efficient switching
- Direct compatibility with standard 5 V logic IC outputs
- Suitable for amplifier and general switching applications
Applications
- Amplifier circuits
- General-purpose switching applications
- Low-power digital interface driving
Procurement Notes
Verify the specific suffix (T2-AZ) against official Renesas documentation to confirm package type and tape-and-reel specifications. Ensure the component meets industrial qualification levels if required for your design. Cross-reference datasheet revision dates to confirm parameter stability before finalizing procurement orders.
Selection Notes
Select this component when a small-signal N-channel MOSFET is required for direct 5 V logic control. Consider the 0.51 A drain current limit and 0.96 W power dissipation capabilities relative to your thermal management strategy. Verify that the 450 mΩ on-resistance at 10 V or 600 mΩ at 4.5 V meets your efficiency requirements.
Part Context
This part belongs to Renesas' discrete semiconductor portfolio, specifically categorized under small-signal FETs. It serves as a vertical-type N-channel MOSFET intended for low-power signal processing and switching tasks where direct integration with 5 V microcontrollers or logic gates is necessary.
Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic cross-references may not match the specific 0.51 A current rating or 5 V drive compatibility. Ensure any substitute maintains the same N-channel configuration and small-signal characteristics.
