ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2111(0)-T1-AZ is a small signal N-channel MOSFET manufactured by Renesas Electronics Corporation. It features a maximum on-resistance of 450 mΩ at 10V gate-source voltage and 600 mΩ at 4.5V. The device has a typical input capacitance of 170 pF and supports a continuous drain current of 1A. It utilizes an SOT-323 package with dimensions of 2 x 4 x 1.6 mm. The component is qualified for industrial applications and is supplied in embossed tape packaging.
Feature Summary
- N-channel MOSFET configuration designed for high-speed switching applications
- Low on-resistance characteristics optimized for efficient power management
- Compact SOT-323 surface-mount package for space-constrained designs
Applications
- Industrial control systems
- High-speed switching circuits
- Power management modules
Procurement Notes
Verify the specific suffix (0) against the manufacturer's official documentation to ensure correct pinout and electrical specifications. Confirm that the industrial qualification level meets your operational requirements. Check for lead-free compliance status as indicated in the datasheet. Ensure the embossed tape packaging format aligns with your automated assembly equipment capabilities before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with low on-resistance is required for industrial-grade applications. The 1A current rating suits small-signal switching tasks. Consider the 450 mΩ resistance at 10V VGS for standard logic-level driving or the 600 mΩ at 4.5V VGS for lower voltage control scenarios. The SOT-323 package is suitable for high-density PCB layouts where minimal footprint is critical.
Part Context
This part belongs to Renesas' small signal MOSFET portfolio, originally derived from NEC technology. It serves as a discrete semiconductor solution for switching applications. The 2SK2111 series is known for its reliability in industrial environments. The (0)-T1-AZ designation specifies the particular variant with defined electrical limits and packaging type within the broader product family.
Replacement Considerations
The 2SK2111-T2-AZ is a related variant within the same series. Verify if the T2 package differs electrically or mechanically from the T1 version required. Cross-reference with other N-channel MOSFETs offering similar RDS(on) and ID ratings if exact substitution is needed.
