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Product Detailed Parameters
- Description：NCH J-FET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The 2SK212E-SPA is an N-channel junction field-effect transistor manufactured by onsemi. It is designed for very high frequency band applications and utilizes silicon technology. The device features a single-element configuration housed in a three-pin SPA (Small Package Assembly) through-hole package. Key electrical specifications include a maximum continuous drain current of 0.02 A, a maximum power dissipation of 0.2 W, and a maximum feedback capacitance of 0.15 pF. It operates in depletion mode with a maximum operating temperature of 125 °C.
Feature Summary
- Optimized for very high frequency signal amplification tasks
- Utilizes low feedback capacitance to maintain signal integrity at RF frequencies
- Constructed using silicon junction FET technology for reliable performance
Applications
- RF small signal amplifier circuits
- Very high frequency band signal processing
- Low noise front-end stages in communication equipment
Procurement Notes
Verify the specific suffix designation against official datasheets to confirm pinout and packaging variations. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure thermal management aligns with the specified maximum operating temperature limits during design validation.
Selection Notes
Select this component when low input capacitance and high-frequency response are critical requirements. Compare the 0.02 A current rating against circuit load demands. Evaluate the SPA package constraints against available PCB real estate and mounting orientation needs for the target assembly.
Part Context
This part belongs to the discrete transistor category within onsemi's portfolio. It serves as a specialized solution for RF applications where standard MOSFETs may exhibit excessive capacitance. The SPA package provides a compact form factor suitable for space-constrained high-frequency designs.
Replacement Considerations
Direct cross-references require matching N-channel JFET characteristics, specifically VHF operation capability and similar capacitance values. Verify pin compatibility and thermal resistance before substituting. Consult manufacturer substitution guides for validated alternatives.
