2SK2145-BL(TE85L,F

$0.77

Description：JFET 2N-CH SMV
Series：-

SKU:69b78963f6e2 Category: JFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：JFET 2N-CH SMV
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：2 N-Channel (Dual)
Voltage - Breakdown (V(BR)GSS)：-
Drain to Source Voltage (Vdss)：-
Current - Drain (Idss) @ Vds (Vgs=0)：6 mA @ 10 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：200 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds：13pF @ 10V
Resistance - RDS(On)：-
Power - Max：300 mW
Operating Temperature：125°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-74A, SOT-753
Supplier Device Package：SMV
Grade：-
Qualification：-

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2SK2145-BL(TE85L,F

Overview

The Toshiba 2SK2145-BL(TE85L,F) is a dual N-channel junction field-effect transistor (JFET) designed for audio frequency low noise amplifier applications. It integrates two devices within an SM5 (SC-74A/SOT-753) super mini type package with five leads. The component features a high forward transfer admittance of 15 mS typical at VDS = 10 V and VGS = 0, alongside a gate-drain breakdown voltage of -50 V. Electrical characteristics include a drain current IDSS range of 6.0 to 14.0 mA for the BL classification, a maximum gate-leakage current of -1.0 nA, and a low noise figure of 1.0 dB typical at 1 kHz.

Feature Summary

Integrates two independent JFETs in a compact SM5 surface-mount package
Optimized for audio frequency low noise amplifier applications
Provides high forward transfer admittance for effective signal amplification
Features high input impedance with minimal gate leakage current

Applications

Audio frequency low noise amplifier circuits
Microphone preamplifier stages
High-fidelity audio signal processing equipment

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor and Storage documentation to confirm the electrical binning class. The BL designation indicates a specific drain current range; ensure this matches circuit requirements. Confirm compliance with RoHS directives and check for any recent reliability handbook updates regarding derating concepts before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits requiring dual matched JFETs in a small footprint. The BL suffix provides a higher drain current range compared to other classifications, suitable for specific biasing needs. Ensure the design accommodates the absolute maximum ratings, particularly the 300 mW total power dissipation and -50 V gate-drain breakdown voltage, to maintain operational reliability.

Part Context

This device belongs to the Toshiba 2SK2145 series of silicon N-channel junction type field-effect transistors. The series is engineered specifically for audio applications where low noise performance and high linearity are critical. The dual configuration allows for balanced differential amplifier designs or stereo channel integration within a single surface-mount package.

Replacement Considerations

Substitute parts must match the SM5 package dimensions and pinout. Verify that alternative dual JFETs meet the required forward transfer admittance and noise figure specifications for the intended audio application.