2SK2157C-T1-AZ

$0.83

Description：2SK2157C-T1-AZ - N-CHANNEL MOS F
Series：-
Mfr：Renesas
Package：Bulk

SKU:6bf3faf56eef Category: Single FETs, MOSFETs Brand: Renesas

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Product introduction

Product Detailed Parameters

Description：2SK2157C-T1-AZ - N-CHANNEL MOS F
Series：-
Mfr：Renesas
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：63mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：4 nC @ 4 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：260 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MP-2
Package / Case：TO-243AA

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2SK2157C-T1-AZ

Overview

The Renesas 2SK2157C-T1-AZ is an N-channel Power MOSFET designed for automotive and industrial applications. It features a 30V drain-source voltage rating and supports a continuous drain current of 3.5A. The device exhibits a maximum on-resistance of 63mΩ at 4.5V gate drive with 2A current, ensuring efficient power switching. Packaged in the SOT-89 (MP-2) format measuring 4 x 7 x 1.6 mm, it offers low thermal resistance suitable for compact designs.

Feature Summary

Automotive-grade reliability for harsh environments
Low on-resistance for high efficiency
Compact SOT-89 surface-mount package

Applications

Automotive power management systems
Industrial motor drivers
Consumer electronics power switches

Procurement Notes

Verify the specific suffix 'C' against official Renesas documentation to confirm exact electrical tolerances and automotive qualification status. Ensure the MP-2 package dimensions match your PCB footprint requirements. Confirm lead-free compliance and embossed tape carrier specifications for automated assembly integration.

Selection Notes

Select this component when a 30V N-channel MOSFET with 3.5A capability is required in a small form factor. The 63mΩ RDS(on) at 4.5V makes it suitable for low-voltage logic control. Consider thermal dissipation limits within the SOT-89 package for high-current continuous operation scenarios.

Part Context

This part belongs to Renesas' automotive Power MOSFET portfolio, utilizing the MP-2 package type. It is distinct from standard industrial variants by its qualification level for automotive use. The device serves as a switching element in low-side configurations for load control.