2SK2158(0)-T1B-A

2SK2158(0)-T1B-A

$0.20
  • Description:SMALL SIGNAL N-CHANNEL MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk

SKU:e89e38c29bd9 Category: Brand:

  
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Product Detailed Parameters

  • Description:SMALL SIGNAL N-CHANNEL MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK2158(0)-T1B-A

Overview

The 2SK2158(0)-T1B-A is a small signal N-channel MOSFET manufactured by Renesas Electronics Corporation. It features an MM package with three leads and dimensions of 3 x 3 x 1.4 mm. The device has a typical input capacitance (Ciss) of 6 pF and a drain current (ID) rating of 0.1 A. It is lead-free, RoHS compliant, and supplied in embossed tape packaging.

Feature Summary

  • Designed for high-speed switching applications
  • Operates at low voltage levels down to 1.5 V
  • Vertical type N-channel MOS FET structure

Applications

  • High-speed switching circuits
  • Low voltage power management systems

Procurement Notes

Verify the specific suffix T1B-A against official Renesas documentation to confirm package type and tape orientation. Ensure compatibility with automated placement equipment using the specified MM package dimensions. Confirm RoHS compliance status through the manufacturer's latest declaration before integration into regulated assemblies.

Selection Notes

Select this component for designs requiring low input capacitance and operation at voltages as low as 1.5 V. The small MM package suits space-constrained layouts. Verify that the 0.1 A current rating meets circuit requirements. Consider thermal performance within the 3x3x1.4 mm footprint during PCB layout planning.

Part Context

This part belongs to Renesas' small signal MOSFET portfolio, originally derived from NEC Technology specifications. It serves as a vertical N-channel device optimized for fast switching speeds. The product line supports automotive and general electronic applications requiring reliable low-voltage performance.

Replacement Considerations

Cross-reference with original NEC 2SK2158 specifications for functional equivalence. Verify pinout compatibility and electrical parameters such as Ciss and ID when substituting.

2SK2158(0)-T1B-A2SK2158(0)-T1B-A
$0.20
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