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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The 2SK2161 is a silicon N-channel power MOSFET manufactured by Sanyo, now part of onsemi. It features a TO-220AB flange-mount package with three pins. Key electrical parameters include a drain-source breakdown voltage (V_DSS) of 200 V and a continuous drain current (I_D) of 9 A at case temperature. The maximum on-resistance (R_DS(on)) is specified as 0.35 Ω. The device supports a pulsed drain current of 36 A and has a maximum power dissipation of 25 W. It operates in depletion mode.
Feature Summary
- N-channel silicon metal-oxide semiconductor field-effect transistor
- Flange mount plastic/epoxy encapsulation for thermal management
- Depletion mode operation capability
Applications
Procurement Notes
Verify the manufacturer origin carefully, as the 2SK2161 was originally produced by Sanyo Semiconductor. Confirm RoHS compliance status through official documentation, as historical data indicates varying qualification states. Ensure the specific suffix or variant matches your design requirements, noting that sourcing may involve legacy inventory channels rather than standard active production lines.
Selection Notes
Select this component for applications requiring a 200 V rated, 9 A capable N-channel MOSFET in a TO-220AB package. Consider its depletion mode characteristic if normally-on behavior is required. Evaluate thermal constraints given the 25 W dissipation limit and 0.35 Ω on-resistance. Verify compatibility with existing PCB footprints designed for the R-PSFM-T3 flange mount form factor.
Part Context
This device belongs to the family of discrete power transistors historically associated with Sanyo Semiconductor before its acquisition by onsemi. It represents a legacy power switching solution utilizing silicon MOS technology. The part number structure aligns with Sanyo's naming conventions for high-voltage power FETs intended for general-purpose switching and amplification roles.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other 200 V, 9 A N-channel MOSFETs in TO-220 packages only after verifying pinout compatibility and electrical parameter equivalence against the original Sanyo datasheet.
