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Product Detailed Parameters
- Description：ABU / MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1500 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：12Ohm @ 1A, 15V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：990 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：50W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3PFM
- Package / Case：TO-220-3 Full Pack
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Overview
The 2SK2225-80-E#T2 is an N-channel power MOSFET manufactured by Renesas Electronics. It features a drain-source voltage (VDSS) of 1500V and a continuous drain current (ID) of 2A. The maximum on-state resistance (RDS(on)) is specified at 12Ω, with a typical value of 9Ω under standard test conditions. The device operates within a channel temperature range up to 150°C and has a maximum power dissipation of 50W at 25°C case temperature. Key switching parameters include a turn-on delay time of 17ns, rise time of 50ns, turn-off delay time of 150ns, and fall time of 50ns. Input capacitance is typically 990pF.
Feature Summary
- High breakdown voltage capability for high-voltage switching applications
- Fast switching characteristics with low gate charge requirements
- Robust thermal performance in TO-3PFM package
- Resistance to secondary breakdown effects
Applications
- Inverter power supplies
- Switching regulators
- DC-DC converters
Procurement Notes
Verify the specific suffix #T2 indicates assembly origin, as variants exist for different regions. Confirm RoHS compliance status, as older 2SK2225 models may differ from the -E series. Ensure the TO-3PFM package matches your board layout requirements. Check absolute maximum ratings against your system's peak voltage and current stresses before integration.
Selection Notes
Select this component for designs requiring high voltage isolation with moderate current handling. The 1500V rating suits industrial and consumer high-voltage topologies. Compare RDS(on) values against thermal constraints to ensure efficient operation. Consider the TO-3PFM footprint if through-hole mounting is preferred over surface-mount alternatives.
Part Context
This part belongs to the 2SK2225 series of N-channel power MOSFETs produced by Renesas Electronics, formerly Hitachi Semiconductor. The series includes variants such as 2SK2225-E and 2SK2225-E-Q. These devices are designed for general-purpose high-voltage switching, leveraging legacy NEC and Hitachi technology heritage.
Replacement Considerations
Direct substitutes include other 1500V N-channel MOSFETs in TO-3PF packages. Verify pinout compatibility and electrical parameters such as VDSS, ID, and RDS(on). Cross-reference with Renesas internal codes PRSS0003ZA-A or PRSS0003ZP-A for package identification.
