2SK2225-E

2SK2225-E

$10.28
  • Description:MOSFET N-CH 1500V 2A TO3PFM
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube

SKU:b4ef747a4ee9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N-CH 1500V 2A TO3PFM
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):1500 V
  • Current - Continuous Drain (Id) @ 25°C:2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:12Ohm @ 1A, 15V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:984.7 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-3PFM
  • Package / Case:TO-3PFM, SC-93-3

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2SK2225-E

Overview

The 2SK2225-E is an N-channel power MOSFET manufactured by Renesas Electronics, designed for high-voltage and high-speed switching applications. It features a drain-source voltage (VDSS) of 1500V and a continuous drain current (ID) of 2A. The device has a maximum on-resistance (RDS(on)) of 12Ω and a typical value of 9Ω. Key electrical parameters include a gate-source threshold voltage (VGS(off)) of up to 4.0V, input capacitance (Ciss) of 990pF, and a maximum power dissipation of 50W. Switching characteristics show a typical turn-on delay time of 17ns, rise time of 50ns, turn-off delay time of 150ns, and fall time of 50ns.

Feature Summary

  • High breakdown voltage capability suitable for demanding power environments
  • Fast switching performance with low drive current requirements
  • Robust construction eliminating secondary breakdown risks

Applications

  • Inverter power supplies
  • Switching regulators
  • DC-DC converters

Procurement Notes

Verify the specific suffix against official Renesas documentation to confirm exact manufacturing origin and compliance status. Ensure the ordering code matches the required package variant and environmental specifications. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring high voltage isolation and moderate current handling in compact form factors. Evaluate thermal management needs based on the 50W dissipation limit and TO-3PFM package characteristics. Confirm that the 1500V rating aligns with system transient voltages and operating conditions.

Part Context

This part belongs to the 2SK2225 series produced by Renesas Electronics, formerly Hitachi Semiconductor. The series includes variants such as 2SK2225, 2SK2225-E-Q, and 2SK2225-80-E. These devices are established components in industrial power control, leveraging decades of MOSFET development heritage from NEC and Hitachi technologies.

Replacement Considerations

Consult official substitution guides for equivalent high-voltage N-channel MOSFETs. Verify pin compatibility and thermal resistance values when considering alternatives.

2SK2225-E2SK2225-E
$10.28
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