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The 2SK2225-E is an N-channel power MOSFET manufactured by Renesas Electronics, designed for high-voltage and high-speed switching applications. It features a drain-source voltage (VDSS) of 1500V and a continuous drain current (ID) of 2A. The device has a maximum on-resistance (RDS(on)) of 12Ω and a typical value of 9Ω. Key electrical parameters include a gate-source threshold voltage (VGS(off)) of up to 4.0V, input capacitance (Ciss) of 990pF, and a maximum power dissipation of 50W. Switching characteristics show a typical turn-on delay time of 17ns, rise time of 50ns, turn-off delay time of 150ns, and fall time of 50ns.
Verify the specific suffix against official Renesas documentation to confirm exact manufacturing origin and compliance status. Ensure the ordering code matches the required package variant and environmental specifications. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.
Select this component for circuits requiring high voltage isolation and moderate current handling in compact form factors. Evaluate thermal management needs based on the 50W dissipation limit and TO-3PFM package characteristics. Confirm that the 1500V rating aligns with system transient voltages and operating conditions.
This part belongs to the 2SK2225 series produced by Renesas Electronics, formerly Hitachi Semiconductor. The series includes variants such as 2SK2225, 2SK2225-E-Q, and 2SK2225-80-E. These devices are established components in industrial power control, leveraging decades of MOSFET development heritage from NEC and Hitachi technologies.
Consult official substitution guides for equivalent high-voltage N-channel MOSFETs. Verify pin compatibility and thermal resistance values when considering alternatives.