2SK2260-O-TD-E

2SK2260-O-TD-E

$0.57
  • Description:NCH 10V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk

SKU:491f5eaa22db Category: Brand:

  
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Product Detailed Parameters

  • Description:NCH 10V DRIVE SERIES
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

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2SK2260-O-TD-E

Overview

The onsemi 2SK2260-O-TD-E is a single N-channel MOSFET belonging to the 10V Drive Series. It is designed for low-voltage switching applications requiring efficient gate drive characteristics. The component utilizes surface-mount packaging technology suitable for automated assembly processes in consumer and industrial electronics.

Feature Summary

  • Optimized for 10V gate drive operations to enhance switching efficiency
  • N-channel configuration for standard low-side or high-side switching topologies
  • Designed for compact surface-mount integration

Applications

  • Low-voltage DC-DC converter circuits
  • Battery-powered device power management
  • General-purpose low-voltage switching loads

Procurement Notes

Verify the specific suffix '-O-TD-E' against official onsemi documentation to confirm tape-and-reel specifications and RoHS compliance status. Ensure the ordering part number matches the exact package outline and marking requirements defined in the current datasheet revision before finalizing procurement orders.

Selection Notes

Select this component when a low-voltage N-channel MOSFET compatible with 10V logic gates is required. Evaluate the absolute maximum ratings and thermal resistance parameters from the official datasheet to ensure suitability for the target application's voltage, current, and temperature constraints.

Part Context

This device is part of onsemi's discrete semiconductor portfolio, specifically categorized under single FETs and MOSFETs. It serves as a building block for power management integrated circuits and discrete switching stages within broader electronic systems manufactured by onsemi.

Replacement Considerations

Consult official cross-reference guides for verified substitutes. Generic equivalents may differ in gate charge or on-resistance; verify electrical compatibility with the original specification sheet.

2SK2260-O-TD-E2SK2260-O-TD-E
$0.57
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