2SK2329L-E

$1.23

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:ac4f42b4c6b7 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK2329L-E

Overview

The 2SK2329L-E is a silicon N-channel MOSFET manufactured by Renesas Electronics Corporation. It belongs to the single FET category and is RoHS3 compliant. The component is designed for high-performance switching applications, offering low on-resistance and high breakdown voltage characteristics.

Feature Summary

Low on-resistance combined with high breakdown voltage
High speed switching capability
Low drive current requirement
No secondary breakdown

Applications

Switching regulators

Procurement Notes

Verify the specific datasheet version for the 2SK2329L-E part number to ensure compatibility with your design requirements. Confirm RoHS3 compliance status as required by your manufacturing standards. Check for any specific ordering suffixes that may affect package or performance specifications.

Selection Notes

Select this component for applications requiring efficient power switching with minimal drive current. The combination of low on-resistance and high breakdown voltage makes it suitable for robust power management solutions. Ensure thermal management aligns with the TOLL package characteristics if applicable.

Part Context

This part is part of Renesas' portfolio of discrete semiconductors, specifically within the transistors and MOSFETs segment. It serves as a single FET solution for various electronic circuits, supporting the company's focus on innovative semiconductor technologies for diverse industrial and consumer applications.

Replacement Considerations

Consult official Renesas documentation for verified substitute part numbers. Cross-reference electrical parameters such as on-resistance and breakdown voltage when evaluating alternatives to ensure functional equivalence in switching regulator designs.