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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2364(1)-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for high-voltage switching applications, offering low on-resistance characteristics suitable for efficient power management. The component features a single channel configuration with three leads and is available in lead-free packaging. It supports industrial and consumer use cases, providing reliable performance in electronic circuits requiring robust switching capabilities.
Feature Summary
- Designed for high voltage switching applications
- Features low on-resistance for improved efficiency
- Single channel N-Channel MOS Field Effect Transistor
Applications
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the specific suffix (1)-AZ against official Renesas documentation to confirm exact pinout and package dimensions. Ensure compatibility with RoHS directives if lead-free status is required for your assembly process. Cross-reference the manufacturer product number with authorized distributors to avoid counterfeit components. Confirm thermal performance requirements match the intended application environment before procurement.
Selection Notes
Select this component when high-voltage switching is required in compact designs. Consider its low on-resistance for applications prioritizing energy efficiency. Verify that the single-channel configuration meets circuit topology needs. Evaluate thermal dissipation capabilities relative to the expected load current and ambient temperature conditions during system design.
Part Context
This part belongs to the 2SK2363/2SK2364 series of N-Channel MOS Field Effect Transistors. These devices are engineered specifically for high-voltage switching tasks. The series shares common design principles focused on minimizing conduction losses while maintaining robust switching performance in various electronic systems.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Generic replacements may not match the specific electrical characteristics or package dimensions. Ensure any substitute component maintains compatibility with existing board layouts and thermal management solutions.
