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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2373ZE-TL-E is a single-element, N-channel silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by Renesas Electronics Corporation. Designed for enhancement mode operation, this component features a maximum drain-source breakdown voltage of 30V and a continuous drain current rating of 0.2A. It exhibits a maximum on-resistance of 2.5 ohms. The device is housed in a small outline plastic/epoxy package with dual gull-wing terminals, suitable for surface mount applications.
Feature Summary
- N-channel silicon MOSFET technology for switching applications
- Enhancement mode operation capability
- Surface mount compatible small outline package
Applications
- General purpose electronic circuit switching
- Low power signal processing interfaces
Procurement Notes
Verify the specific manufacturer datasheet for the 2SK2373ZE-TL-E to confirm exact electrical characteristics and mechanical dimensions. Ensure compatibility with the intended PCB footprint and thermal management requirements. Confirm RoHS compliance status and lead-free specifications against current production standards before finalizing procurement.
Selection Notes
Select this component for low-voltage, low-current switching tasks requiring an N-channel enhancement mode MOSFET. Evaluate the 2.5 ohm on-resistance against the specific load requirements to ensure acceptable power dissipation. Consider the 30V breakdown voltage margin relative to the operating supply voltage.
Part Context
This part belongs to the discrete semiconductor transistor category, specifically within the field-effect transistor segment. Renesas Electronics Corporation produces this silicon-based component for use in general-purpose electronic systems where compact surface-mount packaging and basic switching functionality are required.
Replacement Considerations
Consult official Renesas documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and package dimensions.
