2SK2394-7-TB-E

2SK2394-7-TB-E

  • Description:JFET N-CH 50MA 3CP
  • Series:-

SKU:a2dd7978dfbf Category: Brand:

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Product Detailed Parameters

  • Description:JFET N-CH 50MA 3CP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):-
  • Drain to Source Voltage (Vdss):15 V
  • Current - Drain (Idss) @ Vds (Vgs=0):16 mA @ 5 V
  • Current Drain (Id) - Max:50 mA
  • Voltage - Cutoff (VGS off) @ Id:300 mV @ 100 µA
  • Input Capacitance (Ciss) (Max) @ Vds:10pF @ 5V
  • Resistance - RDS(On):-
  • Power - Max:200 mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-CP
  • Grade:-
  • Qualification:-

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2SK2394-7-TB-E

Overview

The onsemi 2SK2394-7-TB-E is an N-channel JFET in a CP3 (SC-59-3) surface-mount package. It operates with a Drain-to-Source Voltage of 15 V and supports a maximum Drain Current of 50 mA. The device provides a Drain Current (IDSS) range of 10 to 20 mA at VDS = 5 V, with a Forward Transfer Admittance (|yfs|) ranging from 20 to 38 mS. Key electrical parameters include a Gate Cutoff Voltage (VGS(off)) between -0.3 V and -1.0 V, Input Capacitance (Ciss) of 10 pF, and Reverse Transfer Capacitance (Crss) of 2.9 pF. It features a low Noise Figure of 1.0 dB at 1 kHz.

Feature Summary

  • Ultralow noise figure suitable for sensitive RF signal processing
  • High forward transfer admittance for effective amplification
  • Small input capacitance minimizing signal loading effects
  • Compact SC-59-3 package enabling slim and small circuit designs

Applications

  • AM tuner RF amplifier circuits
  • Low-noise amplifier stages
  • Impedance conversion applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure the component meets all environmental and safety standards required for the intended application environment.

Selection Notes

Select this component when ultralow noise performance and high transconductance are critical requirements. The 10–20 mA IDSS range offers flexibility for biasing configurations. Verify that the 15 V voltage rating aligns with the system's maximum operating conditions to ensure reliable operation within absolute maximum ratings.

Part Context

This part belongs to the 2SK2394 family of N-channel JFETs manufactured by onsemi. It is designed specifically for applications requiring high gain and minimal noise introduction in compact form factors. The device utilizes a lead-free manufacturing process consistent with modern environmental regulations.

Replacement Considerations

Consult official substitution guides for verified alternatives. Cross-compatibility depends on matching IDSS ranges, voltage ratings, and package dimensions. Verify pinout alignment and thermal characteristics before implementing any substitute components in existing designs.

2SK2394-7-TB-E2SK2394-7-TB-E

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