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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2425-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It features a single configuration with a built-in diode and an isolated case connection. The device has a minimum drain-source breakdown voltage of 250 V. Typical input capacitance (Ciss) is 690 pF. It utilizes a three-lead carrier type tube packaging and is lead-free. The component is designed for industrial and consumer applications, offering low on-resistance and high-speed switching capabilities suitable for switching regulators and DC-DC converters.
Feature Summary
- Low on-resistance for efficient conduction
- High-speed switching performance
- Low drive current requirement
- No secondary breakdown
Applications
- Switching regulators
- DC-DC converters
- Industrial equipment
- Consumer electronics
Procurement Notes
Verify the discontinued status of this part number before initiating any procurement activities. Confirm that the specific package type and pinout match your existing design requirements. Ensure compatibility with your manufacturing processes regarding the lead-free specification. Check for available alternative components from Renesas or other manufacturers if supply chain continuity is a concern. Validate all electrical parameters against your system specifications.
Selection Notes
Select this component for applications requiring a 250 V N-channel MOSFET with integrated body diode. Consider its low on-resistance and high-speed switching characteristics for power conversion circuits. Evaluate the thermal management needs associated with its package type. Verify that the low drive current aligns with your gate driver capabilities. Assess the suitability for both industrial and consumer use cases based on reliability standards.
Part Context
The 2SK2425-E belongs to the single FET category within Renesas Electronics' portfolio. It is a discrete power semiconductor device designed for general-purpose switching applications. The product line includes various MOSFETs optimized for different voltage and current ratings. This specific model is characterized by its 250 V rating and single-channel configuration with a built-in diode.
Replacement Considerations
The datasheet indicates the status as DISCONTINUED. No public confirmed substitute part numbers are provided in the source material. Users should consult Renesas Electronics directly for recommended replacements or updated product lines.
