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Product Detailed Parameters
- Description：2SK2461 - SILICON N CHANNEL MOSF
- Series：-
- Mfr：Renesas
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 35W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：ITO-220AB
- Package / Case：TO-220-3 Full Pack, Isolated Tab
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Overview
The 2SK2461-AZ is a silicon N-channel MOSFET manufactured by Renesas Electronics. It features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 20 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 80 mΩ at 10 V gate drive and 100 mΩ at 4.5 V. Typical input capacitance (Ciss) is 470 pF, with a total gate charge (Qg) of 51 nC. Power dissipation ratings are 2 W at ambient temperature and 35 W at case temperature. It is housed in an ITO-220AB through-hole package.
Feature Summary
- N-channel silicon MOSFET technology for power switching applications
- Low on-resistance characteristics to minimize conduction losses
- High voltage capacity suitable for industrial and consumer circuits
Applications
- Industrial control systems
- Consumer electronics power management
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix and package variant against the official Renesas datasheet to ensure compatibility with your design requirements. Confirm that the component meets all relevant environmental standards and qualification levels specified for industrial use before finalizing procurement decisions.
Selection Notes
Select this component when a 100 V N-channel MOSFET with moderate current handling capability is required. Consider the thermal performance constraints given the 2 W ambient and 35 W case dissipation ratings. Ensure the gate drive voltage aligns with the specified Rds(on) test conditions for optimal efficiency.
Part Context
This part belongs to Renesas' discrete semiconductor transistor portfolio, specifically within the single FET and MOSFET category. Renesas acquired Intersil, which previously held rights to certain legacy designs, integrating these components into its broader power management and signal processing offerings for global markets.
Replacement Considerations
Consult official Renesas documentation for confirmed substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical parameters, and thermal characteristics against the original specifications.
