ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The 2SK2462(04)-AZ is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It is designed for switching applications in power electronics circuits. The device features a maximum drain-source on-resistance of 140 mΩ at VGS = 10V and 170 mΩ at VGS = 4.5V. Typical gate charge (Qg) is 33 nC. The component is lead-free, RoHS compliant, and operates at an industrial qualification level.
Feature Summary
- N-channel power MOSFET architecture optimized for high-efficiency switching operations
- Low on-resistance characteristics to minimize conduction losses
- Industrial qualification level ensuring reliability in demanding environments
Applications
- Power electronics circuit switching
- Industrial power management systems
- General-purpose power conversion applications
Procurement Notes
Verify the manufacturer part number 2SK2462(04)-AZ against official Renesas documentation to ensure authenticity. Confirm that the specific suffix matches the required electrical specifications. Check for RoHS compliance status if environmental regulations apply to your deployment. Ensure the component is sourced from authorized distributors to avoid counterfeit risks.
Selection Notes
Select this component when an N-channel MOSFET with low RDS(on) is required for power switching. Consider the 140 mΩ resistance at 10V drive for efficiency. Verify that the 33 nC gate charge aligns with your driver capabilities. Ensure the industrial qualification level meets your system's operational requirements.
Part Context
This component belongs to the single FET category within Renesas' power MOSFET portfolio. It is distinct from P-channel variants or other channel types. The part is actively manufactured and available in bulk packaging. It serves as a discrete solution for power control tasks rather than integrated circuits.
Replacement Considerations
Direct substitutes are not explicitly confirmed in public data. Evaluate alternatives based on matching N-channel configuration, similar RDS(on) values, and compatible package dimensions. Verify that any replacement maintains the industrial qualification level and RoHS compliance.
