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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2A MPT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：380mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：MPT3
- Package / Case：TO-243AA
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Overview
The 2SK2463T100 is a silicon N-channel MOSFET designed for small switching applications. It features a low on-resistance and fast switching speed, supporting a wide safe operating area (SOA). The device operates with a low-voltage drive of 4V, facilitating easy design of drive circuits. It is engineered to be easily paralleled for higher current handling. The component is supplied in a Taping packaging format, suitable for surface mount technology assembly processes.
Feature Summary
- Low on-resistance for efficient power conduction
- Fast switching speed for high-frequency operation
- Wide safe operating area (SOA) for robust performance
- Low-voltage drive capability at 4V
Applications
- Small switching circuits
- Drive circuits requiring low-voltage control
- Parallel-connected power stages
Procurement Notes
Verify the specific suffix T100 against the manufacturer's official documentation to confirm packaging details and availability status. Ensure compatibility with surface mount assembly requirements. Cross-reference electrical characteristics with the latest datasheet revision to guarantee adherence to design specifications for low-voltage drive and switching performance.
Selection Notes
Select this component for applications requiring efficient small-signal switching with low gate drive voltage. The wide SOA and fast switching characteristics make it suitable for demanding power management tasks. Consider parallel configurations if higher current capacity is needed beyond the single-device rating.
Part Context
This part belongs to Rohm Semiconductor's lineup of small switching transistors. It is an N-channel MOSFET optimized for low-voltage drive applications. The device structure utilizes silicon technology to achieve low on-resistance and fast switching speeds, distinguishing it from standard general-purpose MOSFETs.
Replacement Considerations
Consult official substitution guides for compatible N-channel MOSFETs with similar voltage ratings and on-resistance values. Verify pinout compatibility and thermal characteristics before implementing any alternative components.
